Electrical characteristics of 4H-SiC MIS Capacitors With Ni/CNT/SiO2 Structure
نویسندگان
چکیده
منابع مشابه
Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and pimplanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and ch...
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ژورنال
عنوان ژورنال: Journal of IKEEE
سال: 2014
ISSN: 1226-7244
DOI: 10.7471/ikeee.2014.18.4.620